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STB50NE10L

Part No STB50NE10L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description French Electronic Distributor since 1988
Sample
Rohs State rohs
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Products specifications Report Issue?

Case / Package D2PAK
Continuous Drain Current (ID) 50 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 240 mΩ
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 175 °C
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 3
Power Dissipation 150 W
Radiation Hardening No
Rise Time 105 ns
RoHS Compliant
Turn-Off Delay Time 135 ns
Win Source Part Number 1201767-STB50NE10L
Categories Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB50NE10L CAD Model

Description

The STB50NE10L is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver efficient power management and switching with its advanced technology, making it an ideal choice for a wide range of applications, including power supplies, motor controls, and high-speed switching circuits.

Key Features

  • Low On-Resistance: The STB50NE10L boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) of 50A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • 100V Drain-Source Voltage (V<sub>DS): The device supports a maximum voltage of 100V between the drain and source terminals, offering a wide operating range for various circuit designs.
  • Fast Switching Speed: The fast switching characteristics of the STB50NE10L ensure reduced switching losses and improved performance in high-frequency applications.
  • Low Gate Charge (Q<sub>g): A low gate charge facilitates faster switching and reduces the power required to drive the MOSFET, improving overall system efficiency.
  • Enhanced Durability: The MOSFET is encapsulated in a TO-220 package, which provides robust mechanical protection and excellent thermal dissipation characteristics.

Applications

The versatility of the STB50NE10L allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Inverters
  • Automotive Applications
  • Power Management Functions

Quality and Reliability

STMicroelectronics is committed to providing high-quality products that meet the rigorous demands of the electronics industry. The STB50NE10L MOSFET is manufactured with state-of-the-art technology and is subject to stringent quality control processes, ensuring reliability and performance in the field.

Whether you are designing a new power supply or upgrading an existing system, the STB50NE10L N-Channel MOSFET from STMicroelectronics offers the efficiency, speed, and durability needed to create a high-performance end product.

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