STB55NF06T4

Part No STB55NF06T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 60V 50A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031082-STB55NF06T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STB55NF06
Introduction Date March 23, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Alternative Parts
(Cross-Reference)
AOB462L;  2SK2376(SM,Q); BUK7616-55AT; BUK7616-55A;  

Description

STB55NF06T4 - N-Channel MOSFET by STMicroelectronics

The STB55NF06T4 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver efficient power conversion in a variety of applications, from power supplies to motor controls. With its robust design and advanced manufacturing technology, the STB55NF06T4 is an ideal choice for high-efficiency power management tasks.

Key Features

  • High Current Capability: The STB55NF06T4 is capable of handling continuous drain currents up to 55 A, making it suitable for high-power applications.
  • Low On-Resistance: With an RDS(on) value of just 14 mΩ (max), this MOSFET ensures minimal power loss and improved efficiency during operation.
  • High Switching Speed: The fast switching performance of the STB55NF06T4 reduces switching losses and improves the overall efficiency of power conversion circuits.
  • 100% Avalanche Tested: Reliability is a key aspect of the STB55NF06T4, which is guaranteed through rigorous avalanche testing.
  • Application Versatility: Suitable for a wide range of applications including DC-DC converters, motor drivers, and power management systems.

Electrical Characteristics

  • Drain-source Voltage (VDS): 60V
  • Gate-source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 55A
  • Power Dissipation (PD): 110W
  • Operating Temperature Range: -55°C to 175°C

Package and Quality

The STB55NF06T4 is available in a D2PAK package, known for its durability and thermal efficiency. The device's package is designed to optimize the thermal resistance and footprint size, making it a compact and reliable solution for modern electronic designs. STMicroelectronics ensures that the STB55NF06T4 meets the highest quality standards, with rigorous testing and quality control measures in place.

Overall, the STB55NF06T4 N-Channel MOSFET from STMicroelectronics stands out for its efficiency, reliability, and versatility, making it an excellent choice for designers looking to optimize their power conversion systems.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
85+ $0.5964 $50.6940
180+ $0.5580 $100.4400
280+ $0.5387 $150.8360
400+ $0.5003 $200.1200
520+ $0.4810 $250.1200
650+ $0.4618 $300.1700
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 120,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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