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STB75N20

Part No STB75N20
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 37A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102805-STB75N20
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB75N20 CAD Model

Description

STB75N20 - High Performance MOSFET by STMicroelectronics

The STB75N20 is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's STripFET™ series, which is well-known for its low on-resistance and high switching performance. The STB75N20 is specifically engineered to address the demanding requirements of a wide range of power applications, including high-efficiency power supplies, motor control systems, and automotive applications.

Key Features:

  • Low On-Resistance: The STB75N20 boasts an exceptionally low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency. This feature is particularly important for applications where power conservation is critical.
  • High Current Capability: This MOSFET is capable of handling high current loads, making it suitable for applications that require robust power handling capabilities.
  • 100% Avalanche Tested: Ensuring reliability and durability, the STB75N20 is thoroughly tested for avalanche conditions, which means it can withstand harsh operating environments and provide consistent performance over time.
  • Low Gate Charge: The device is designed with a low gate charge (Q<sub>g), which translates to faster switching speeds and reduced switching losses, making it ideal for high-frequency applications.
  • Improved dv/dt Capability: The MOSFET has an enhanced dv/dt rate, which ensures stable operation under fast voltage changes and minimizes the risk of destructive voltage spikes.

Applications:

The versatility of the STB75N20 makes it suitable for a broad spectrum of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-to-AC Inverters
  • DC-to-DC Converters
  • Motor Drives
  • Automotive Environment
  • Power Management Functions

The STB75N20 is a testament to STMicroelectronics' commitment to providing high-quality, innovative semiconductor products. Its robust design, combined with its high-efficiency characteristics, makes it a top choice for engineers and designers looking to enhance the performance and reliability of their power management systems.

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