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STB80NF55-08AG

Part No STB80NF55-08AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 55V 80A D2PAK / N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount D²PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, STripFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 15 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-17142-6,497-17142-1,497-17142-2
Standard Package 1,000
Win Source Part Number 997786-STB80NF55-08AG
Ultra Librarian 3D Model Ultra Librarian STB80NF55-08AG CAD Model

Description

STB80NF55-08AG - N-Channel MOSFET by STMicroelectronics

The STB80NF55-08AG is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is a standout component in power switching applications due to its exceptional efficiency and thermal performance.

Key Features

  • Advanced Technology: Built on STMicroelectronics' advanced STripFET™ process, the STB80NF55-08AG delivers one of the best-in-class on-resistance and gate charge characteristics, ensuring high efficiency in power conversion.
  • High Current Capability: With a continuous drain current (ID) of 80A, this MOSFET can handle high-current applications with ease, making it suitable for demanding environments.
  • Low On-Resistance: The device features an extremely low on-resistance (RDS(on)) of just 0.008 Ohm, minimizing conduction losses and maximizing efficiency in your designs.
  • High Voltage Threshold: With a drain-source voltage (VDS) of 55V, the STB80NF55-08AG can be used in circuits that experience high voltage fluctuations without compromising performance.
  • Improved Thermal Performance: The MOSFET comes in a TO-220 package, which provides excellent thermal transfer and helps maintain stability under high load conditions.

Applications

The STB80NF55-08AG is versatile and can be used in a wide range of applications, including:

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Power management solutions
  • Automotive applications

Reliability and Quality

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB80NF55-08AG is no exception and is designed to provide long-term performance even in the most challenging conditions. It is RoHS compliant and adheres to international quality standards, ensuring that it can be used in a wide range of commercial and industrial applications without concerns regarding environmental or regulatory compliance.

In summary, the STB80NF55-08AG N-channel MOSFET from STMicroelectronics is a robust, efficient, and reliable component that can significantly enhance the performance of power switching circuits across various applications.

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