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STB8NM60D

Part No STB8NM60D
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 2.5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 010705-STB8NM60D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB8NM60D CAD Model

Description

The STB8NM60D is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a leading name in the semiconductor industry. This MOSFET is part of the MDmesh™ II Plus™ series, which is renowned for its excellent energy efficiency and reduced on-resistance. It is designed to meet the rigorous demands of power conversion applications including switch-mode power supplies, lighting, DC-AC inverters, and motor control.

With a voltage rating of 600 V, the STB8NM60D is well-suited for high-voltage applications, ensuring that it can handle significant stress in terms of voltage spikes and surges. The device's low on-resistance of 0.65 Ω typ. contributes to its high efficiency, as it minimizes conduction losses when the MOSFET is in the ON state. This feature is particularly important for applications that require a high level of power density and efficiency.

The STB8NM60D boasts a continuous current rating of 7 A, which means it can handle a substantial amount of current without overheating or failing. This current capacity, combined with the device's high voltage rating, makes it an ideal choice for a wide range of power applications.

One of the standout features of the STB8NM60D is its low gate charge (Qg), which enhances the MOSFET's switching performance. A low Qg reduces the amount of energy required to turn the MOSFET on and off, which is beneficial for high-frequency switching applications. This leads to reduced switching losses and improved overall efficiency of the power conversion system.

The device is packaged in a D²PAK, also known as TO-263, which is a surface-mount package that provides excellent thermal performance and is suitable for compact designs. The package design ensures that the STB8NM60D can be easily integrated into a variety of PCB layouts, making it a versatile choice for designers.

In summary, the STB8NM60D from STMicroelectronics is a robust and efficient power MOSFET that combines high voltage capability, low on-resistance, high current handling, and low gate charge to deliver exceptional performance in power conversion and management applications.

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Availability: 1,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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