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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 540pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 005188-STD10NM60N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD10NM60N
Introduction Date June 10, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STD10NM60N CAD Model

Description

STD10NM60N - STMicroelectronics N-Channel MOSFET

The STD10NM60N is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed with the latest advancements in technology, providing high efficiency and reliability for a wide range of applications.

The device features a 600V drain-source breakdown voltage (V<sub>DS), which makes it ideal for high voltage applications. It also boasts a 10A continuous drain current (I<sub>D), allowing it to handle significant power without overheating. With an R<sub>DS(on) value of 0.65Ω, the STD10NM60N ensures low on-state resistance, which translates to reduced conduction losses and improved overall efficiency.

One of the key benefits of the STD10NM60N is its MDmesh™ II Plus technology. This innovative design minimizes on-state resistance while maintaining a low gate charge (Q<sub>g), making the MOSFET easy to drive and energy-efficient. The device is also equipped with a fast recovery diode, which is crucial for applications that require rapid switching performance.

The STD10NM60N is designed to be robust and durable. It features 100% avalanche tested guarantees that the device can withstand harsh conditions, making it suitable for rugged applications. Additionally, the MOSFET comes in a TO-252 (DPAK) package, which is known for its compact size and excellent thermal performance.

Whether you are designing power supplies, lighting applications, DC-DC converters, or motor drives, the STD10NM60N provides the performance and reliability required for efficient power management. Its high voltage capability, low on-resistance, and fast switching speed make it a top choice for engineers looking to optimize their power circuitry.

In summary, the STD10NM60N from STMicroelectronics is a high-performance N-Channel MOSFET that is perfect for a variety of high voltage and high efficiency applications. With its cutting-edge technology and robust design, it stands as a testament to STMicroelectronics' commitment to providing advanced and reliable power semiconductor solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7952 $51.6880
155+ $0.6525 $101.1375
240+ $0.6321 $151.7040
330+ $0.6117 $201.8610
425+ $0.5913 $251.3025
570+ $0.5302 $302.2140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 111,799 pieces
MOQ: 65 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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