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STD11NM60N-1

Part No STD11NM60N-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STD11
Other Names 497-5963-5
Standard Package 75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278095-STD11NM60N-1
Ultra Librarian 3D Model Ultra Librarian STD11NM60N-1 CAD Model

Description

The STD11NM60N-1 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's MDmesh™ M6 series, which is renowned for its exceptional efficiency and performance in high-voltage applications. The STD11NM60N-1 is specifically engineered to address the demanding requirements of a wide range of electronic circuits, including switch-mode power supplies, lighting applications, DC-DC converters, and more.

Key Features

  • High Voltage Capability: The STD11NM60N-1 is capable of withstanding voltages up to 600V, making it suitable for various high-voltage applications.
  • Low On-Resistance: With an on-resistance of only 0.44 ohms, this MOSFET ensures minimal power loss and higher efficiency in electronic circuits.
  • Reduced Gate Charge: The device features a reduced gate charge, which facilitates faster switching and reduces switching losses.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in harsh conditions.
  • Enhanced Body Diode: The STD11NM60N-1 comes with an enhanced body diode that provides fast recovery and improved performance during reverse recovery operations.

Applications

The versatility of the STD11NM60N-1 makes it an ideal choice for a variety of applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • LED and general lighting applications
  • DC-AC inverters for solar energy systems
  • DC-DC converters
  • Motor control circuits
  • Power management solutions

Technical Specifications

The STD11NM60N-1 is encapsulated in a TO-252 (DPAK) package, which is designed for compact and efficient thermal performance. Its operating temperature range is from -55°C to 150°C, accommodating a wide range of environmental conditions.

Conclusion

With its robust design, high efficiency, and reliability, the STD11NM60N-1 Power MOSFET from STMicroelectronics is an excellent choice for designers looking to enhance the performance of their high-voltage power systems. STMicroelectronics' commitment to quality and performance ensures that this MOSFET will deliver the results that professionals expect from a leading semiconductor manufacturer.

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