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STD12NF06LT4

Part No STD12NF06LT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 42.8W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031110-STD12NF06LT4
Family Name STD12NF06L
Introduction Date February 13, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian STD12NF06LT4 CAD Model

Description

Product Overview: STD12NF06LT4 - STMicroelectronics

The STD12NF06LT4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. Designed with state-of-the-art technology, this MOSFET is an essential component for a wide range of electronic applications where efficiency and reliability are of paramount importance.

The device features an exceptionally low on-state resistance (R<sub>DS(on)) of just 0.045Ω, which significantly enhances its efficiency in conducting electricity. This low resistance ensures minimal power loss and heat generation, making the STD12NF06LT4 ideal for power-intensive applications. Its maximum continuous drain current (I<sub>D) is rated at 12A, allowing the device to handle substantial current loads without performance degradation.

The STD12NF06LT4 operates at a maximum drain-source voltage (V<sub>DS) of 60V, providing a wide safety margin for various circuit designs. This voltage rating, combined with its fast switching speed, makes the MOSFET suitable for high-speed switching applications, such as switching regulators, power management in portable and battery-powered devices, and motor control circuits.

The device is encapsulated in a DPAK package, which is known for its compact size and excellent thermal performance. The surface-mount package allows for efficient heat dissipation and space-saving on PCBs, making it a great choice for compact electronic designs. Additionally, the STD12NF06LT4 is 100% avalanche tested, ensuring that it can withstand rigorous operating conditions and providing designers with a robust and reliable component for their power control systems.

With its combination of low on-state resistance, high current capability, and fast switching performance, the STD12NF06LT4 from STMicroelectronics is an excellent choice for designers looking to optimize their power management solutions. Its robustness and efficiency make it a versatile component suitable for a variety of industrial, automotive, and consumer applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2087 $50.0880
585+ $0.1712 $100.1520
905+ $0.1659 $150.1395
1,250+ $0.1605 $200.6250
1,615+ $0.1552 $250.6480
2,160+ $0.1391 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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