Product Overview: STD16NE06L-1 by STMicroelectronics
The STD16NE06L-1 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to meet the increasing demand for efficient power conversion in modern electronic applications. It is part of the STripFET™ series, which is known for its low on-state resistance and high switching performance.
Key Features
- Low Threshold Drive: The device can be driven at lower gate voltages, making it compatible with logic-level devices and reducing power consumption in the drive circuit.
- High Current Capability: With a continuous drain current of 16A, the STD16NE06L-1 is capable of handling high current loads, making it suitable for demanding applications.
- Low On-Resistance (RDS(on)): A low on-state resistance of typically 0.045Ω minimizes conduction losses and improves overall efficiency.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under extreme conditions.
- Application Versatility: This MOSFET is ideal for a wide range of applications, including DC/DC converters, motor control, and power management tasks.
Specifications
Parameter
Value
Drain-source Voltage (VDSS)
60V
Continuous Drain Current (ID)
16A
Power Dissipation (Pd)
45W
Operating Temperature Range
-55°C to 175°C
RDS(on)
Typically 0.045Ω
The STD16NE06L-1 is available in a TO-252 (DPAK) package, which is suitable for surface-mount technology and ideal for space-constrained applications. Its robust design and thermal performance make it a reliable choice for engineers and designers looking to optimize their power management systems.
For further details, datasheets, and technical support, customers are encouraged to visit the official STMicroelectronics website or contact an authorized distributor. The STD16NE06L-1 represents STMicroelectronics' commitment to providing advanced solutions for efficient power control in today's electronic devices.
