The STD19NF20 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, belonging to their STripFET™ II family. This device is optimized to achieve minimal on-state resistance and to provide superior switching performance. It is housed in a compact DPAK/IPAK package, which is well-suited for space-conscious applications.

Key Features

• Drain-source Voltage (V<sub>DS): 200V, catering to a wide range of applications that require high voltage capabilities.
• Continuous Drain Current (I<sub>D): 17A, allowing for considerable current flow through the device, making it suitable for high-power applications.
• On-state Resistance (R<sub>DS(on)): 0.065Ω, which is remarkably low and contributes to high efficiency and reduced power losses during operation.
• Low Gate Charge (Q<sub>g): This feature ensures reduced switching times and further enhances the MOSFET’s efficiency.
• 100% Avalanche Tested: Guarantees robust performance even in harsh conditions where the MOSFET may be subjected to high-energy pulses.

Applications

The STD19NF20 is designed for a variety of applications, including:

• Switching applications in power supplies, converters, and motor drivers.
• Power management solutions in both consumer and industrial electronics.
• Automotive systems requiring high voltage and current handling capabilities.

Benefits

Utilizing the STD19NF20 Power MOSFET from STMicroelectronics offers numerous benefits:

• Enhanced power density due to its compact DPAK/IPAK package.
• Lower conduction losses as a result of the very low on-state resistance.
• Improved overall efficiency in power conversion applications.
• High reliability and longevity under a variety of operating conditions.

STMicroelectronics' commitment to quality and innovation ensures that the STD19NF20 Power MOSFET is a reliable and efficient choice for designers looking to optimize their power management systems.