STMicroelectronics STD38NH02LT4-E Product Overview

The STD38NH02LT4-E from STMicroelectronics is a cutting-edge N-channel MOSFET designed to deliver high performance and efficiency for a wide range of applications. This power MOSFET is part of STMicroelectronics' STripFET™ II series, which is renowned for its low on-state resistance and low gate charge, making it an ideal choice for high-efficiency power management solutions.

With a continuous drain current of 30A and a drain-source voltage of 24V, the STD38NH02LT4-E is capable of handling significant power levels, which is essential for demanding applications. Additionally, its low threshold voltage ensures that the device can be driven at lower gate voltages, reducing power consumption and improving overall system efficiency.

The STD38NH02LT4-E features an RDS(on) value of only 0.038Ω, which minimizes conduction losses and helps to maintain high efficiency across a range of operating conditions. It also boasts a fast switching speed, further enhancing its performance in high-frequency applications.

Key Features

• Low threshold voltage for enhanced drivability
• Low on-state resistance (RDS(on) = 0.038Ω) for reduced conduction losses
• High continuous drain current (ID = 30A) for robust power handling
• 24V drain-source voltage (VDS) for versatile application compatibility
• Fast switching speed for high-efficiency applications
• 100% avalanche tested for guaranteed reliability

Applications

The STD38NH02LT4-E is suitable for a wide array of applications, including but not limited to:

• Power supply units
• DC-DC converters
• Motor control circuits
• Automotive applications
• Switched-mode power supplies

STMicroelectronics' commitment to quality and performance is evident in the STD38NH02LT4-E MOSFET, making it a reliable and efficient choice for designers and engineers looking to optimize their power management systems.