The STD3LN80K5 is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This device is part of STMicroelectronics' MDmesh™ K5 series, which is known for its extremely reduced on-resistance and low gate charge. These features make the STD3LN80K5 an excellent choice for high-efficiency applications.

Key Features

• Drain-source Voltage (V<sub>DS): 800 V, which allows for reliable operation in high voltage circuits.
• Continuous Drain Current (I<sub>D): 3 A, providing a robust current handling capability for a variety of applications.
• Low On-Resistance (R<sub>DS(on)): This MOSFET offers a low on-state resistance, which minimizes power losses and improves overall efficiency.
• Gate Charge (Q<sub>g): The device has a low gate charge, which facilitates faster switching speeds and reduces switching losses.
• 100% Avalanche Tested: Ensures reliability and performance under extreme conditions.
• Zener-protected: The gate-source of this MOSFET is protected by a Zener diode, providing enhanced safety against overvoltage.

Applications

The STD3LN80K5 MOSFET is designed for a wide range of applications, including:

• Switching applications
• Power supplies
• LED lighting
• DC-DC converters
• Motor control
• Adapters and chargers

Package and Quality

This MOSFET is available in a surface-mount DPAK package, which is suitable for compact designs and ensures good thermal performance. STMicroelectronics is committed to providing high-quality products, and the STD3LN80K5 is no exception. It is manufactured to meet the highest industry standards, ensuring reliability and performance for critical applications.

Conclusion

The STD3LN80K5 from STMicroelectronics is an exceptional choice for designers looking for a high-voltage, high-efficiency, and reliable N-channel MOSFET. Its robust features, combined with STMicroelectronics' reputation for quality, make it a go-to component for a wide range of electronic designs.