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STD3N65M6

Part No STD3N65M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 100 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD3N65
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 935280-STD3N65M6
Ultra Librarian 3D Model Ultra Librarian STD3N65M6 CAD Model

Description

STD3N65M6 - STMicroelectronics N-Channel MOSFET

The STD3N65M6 from STMicroelectronics is a high-performance, N-channel Power MOSFET that is designed to meet a wide range of applications. This component is part of STMicroelectronics' MDmesh™ M6 series, which is renowned for its excellent energy efficiency and low power dissipation. With a drain-source voltage (VDS) of 650V, it's built to handle high voltage operations, making it suitable for a variety of power supply and conversion systems.

Featuring a minimal on-resistance (RDS(on)) of just 1.9 Ohm, the STD3N65M6 ensures high conductivity and low heat generation when conducting electricity. This low on-resistance is a testament to the device's efficiency, as it reduces the amount of power lost as heat, thus improving the overall energy efficiency of the application it's used in.

The STD3N65M6 is encapsulated in a surface-mount DPAK (TO-252) package, which is compact and offers a small footprint on printed circuit boards (PCBs). This packaging is ideal for applications where space is at a premium, yet high power density is required. The device also features a fast switching speed, which is critical for reducing switching losses and improving performance in high-frequency circuits.

This MOSFET is also characterized by its high avalanche ruggedness, meaning it can sustain itself during rapid voltage changes, which is especially beneficial in applications prone to voltage spikes. Such robustness makes the STD3N65M6 a reliable choice for power applications that demand durability and resilience.

Applications that can benefit from the STD3N65M6 include, but are not limited to, switched-mode power supplies (SMPS), LED lighting solutions, high-efficiency DC/DC converters, and power management systems in both consumer and industrial electronics. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it an excellent choice for designers looking to optimize their power circuits for performance and efficiency.

With the STD3N65M6, STMicroelectronics continues its legacy of providing advanced semiconductor solutions that push the boundaries of power management technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7787 $58.4025
185+ $0.6389 $118.1965
280+ $0.6191 $173.3480
390+ $0.5991 $233.6490
500+ $0.5791 $289.5500
670+ $0.5192 $347.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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