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STD60NF06T4

Part No STD60NF06T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 60A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 006353-STD60NF06T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian STD60NF06T4 CAD Model

Description

STD60NF06T4 - N-Channel 60V 60A (Tc) 48W (Tc) Surface Mount DPAK from STMicroelectronics

The STD60NF06T4 from STMicroelectronics is a robust N-channel MOSFET that offers high performance in power switching applications. This MOSFET is part of STMicroelectronics' STripFET™ F4 Power MOSFET series, which is renowned for its low on-resistance and low gate charge. These features make the STD60NF06T4 an excellent choice for high-efficiency power management tasks.

With a drain-source voltage (Vds) of 60V, the STD60NF06T4 is suitable for a wide range of applications, including power supply, automotive, and industrial systems. The device is capable of handling continuous drain currents (Id) up to 60A at 25°C, which is a testament to its high current carrying capacity. The power dissipation (Pd) of 48W at 25°C ensures that the MOSFET can handle significant power levels, making it ideal for high-power applications.

The STD60NF06T4 features an RDS(on) value of just 14 milliohms at 10V, which is indicative of its high efficiency and low conduction losses. This low on-resistance helps to minimize power losses and improve overall system efficiency, which is critical in power-sensitive designs.

The MOSFET is housed in a DPAK (TO-252) package, which is a surface-mount package that allows for efficient heat dissipation and space-saving on PCBs. The compact form factor of the DPAK package makes the STD60NF06T4 a suitable choice for designs where board space is at a premium.

Additional features of the STD60NF06T4 include a fast switching speed, which is essential for reducing switching losses in high-frequency applications. The device also offers excellent ruggedness and reliability, with built-in protection against gate-source voltage (Vgs) surges.

In conclusion, the STD60NF06T4 N-Channel MOSFET from STMicroelectronics is a high-performance, efficient, and reliable component suitable for a variety of power management applications. Its low on-resistance, high current capacity, and robust package design make it an excellent choice for designers looking to optimize their power systems for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7654 $53.5780
160+ $0.6280 $100.4800
250+ $0.6084 $152.1000
340+ $0.5888 $200.1920
440+ $0.5691 $250.4040
590+ $0.5103 $301.0770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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