The STD6N60DM2 is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to meet a wide range of applications, offering a balance between excellent switching performance and low on-state resistance.

Key Features

• Drain-source Voltage (V<sub>DS): 600V, providing a high breakdown voltage suitable for various applications.
• Continuous Drain Current (I<sub>D): 6A, ensuring a reliable current handling capability for high-power tasks.
• Low On-Resistance (R<sub>DS(on)): Minimizes conduction losses and improves overall efficiency.
• High dv/dt Capability: Enables the device to handle fast switching, which is critical for power conversion applications.
• 100% Avalanche Tested: Guarantees robustness and reliability under extreme conditions.
• Improved Gate Charge: Results in faster switching and reduced switching losses.
• Enhanced Body Diode: Features low reverse recovery time (trr) and charge (Qrr), which is beneficial in hard switching applications.

Applications

The STD6N60DM2 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-efficiency DC/DC converters
• Motor Control
• Power Management Functions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest quality and reliability standards. The STD6N60DM2 is no exception and is manufactured with state-of-the-art technology for optimal performance. Customers can trust in the durability and longevity of this MOSFET, which is built to withstand the rigors of demanding electrical environments.

Environmental Compliance

The STD6N60DM2 is compliant with RoHS and Halogen-free standards, ensuring that it meets the latest environmental regulations for electronic components. This commitment to environmental stewardship makes it an ideal choice for eco-conscious applications and manufacturers looking to reduce their ecological footprint.