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STE48NM60

Part No STE48NM60
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Power Dissipation (Max) 450W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package ISOTOP®
Package / Case ISOTOP
Base Product Number STE48
Other Names 497-3171-5
Standard Package 50
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278016-STE48NM60
Ultra Librarian 3D Model Ultra Librarian STE48NM60 CAD Model

Description

The STE48NM60 from STMicroelectronics is a state-of-the-art N-Channel Power MOSFET designed to meet the high-efficiency and energy-saving standards required in modern power conversion applications. This device is part of STMicroelectronics' MDmesh™ series, which is renowned for its excellent on-state resistance and high switching performance.

With a drain-source voltage of 600V, the STE48NM60 is well-suited for high voltage applications, ensuring robustness and reliability. Its low on-state resistance of 0.08Ω contributes to its high efficiency, minimizing conduction losses and making it ideal for high-performance switching applications.

This Power MOSFET can handle a continuous drain current of up to 48A, making it capable of powering a wide range of devices and circuits. The TO-247 package is widely recognized for its ability to handle high current and power levels, and it provides excellent thermal performance, which is crucial for maintaining stability and prolonging the life of the device.

The STE48NM60 incorporates advanced MDmesh™ technology, which optimizes the vertical structure of the device. This technology enables the MOSFET to achieve very low on-state resistance while maintaining a low gate charge and low capacitances, which enhances the overall efficiency of the device during high-speed switching operations.

Applications for the STE48NM60 are diverse and include switch mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and other power conversion systems that require high efficiency and reliability. Its robustness also makes it suitable for hard-switching environments where electronic components are subjected to high stress.

With its combination of high voltage capability, low on-state resistance, and high current handling, the STE48NM60 represents a reliable and efficient solution for designers looking to optimize their power conversion systems.

The device is RoHS compliant and is designed with the commitment to sustainability that STMicroelectronics upholds, ensuring that it meets the environmental standards of today's electronic products.

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