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STF10N65K3

Part No STF10N65K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 005186-STF10N65K3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF10N65K3 CAD Model

Description

STF10N65K3 - N-channel 650 V, 0.65 Ohm typ., 10 A MDmesh K3 Power MOSFET in a TO-220FP package

The STF10N65K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ K3 technology. This power MOSFET is specifically designed to achieve extremely low on-resistance and superior switching performance, making it highly suitable for a wide range of power applications, including switch-mode power supplies, lighting, welding, and other high-efficiency converters.

Key Features

  • Voltage Rating: The device is rated for a maximum drain-source voltage of 650 V, which allows for reliable operation in high voltage applications.
  • Low On-Resistance: With a typical on-resistance of just 0.65 Ohm, the STF10N65K3 ensures minimal conduction losses, enhancing overall system efficiency.
  • Current Capability: It can handle continuous drain currents up to 10 A, making it capable of powering a wide range of electrical loads.
  • TO-220FP Package: Encased in a fully molded TO-220FP package, the STF10N65K3 offers excellent thermal performance and mechanical robustness.
  • 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability under extreme conditions.
  • Zener-Protected: The gate of this MOSFET is protected with an integrated Zener diode, safeguarding the device from electrostatic discharge and gate voltage spikes.

Applications

The STF10N65K3 is ideal for a variety of applications that require high efficiency and power density. These include:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • DC-DC Converters
  • Power Factor Correction Circuits
  • Welding Equipment
  • Solar Inverters and Photovoltaic Systems

STMicroelectronics' commitment to innovation and quality ensures that the STF10N65K3 meets the highest standards, providing designers with a reliable and high-performing component for their power management solutions. With its combination of high voltage capability, low on-resistance, and robust package, the STF10N65K3 is an excellent choice for engineers looking to optimize their power system's performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9679 $58.0740
150+ $0.7946 $119.1900
225+ $0.7704 $173.3400
315+ $0.7450 $234.6750
405+ $0.7207 $291.8835
540+ $0.6456 $348.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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