The STF11N52K3 is a high-performance N-channel Power MOSFET produced using STMicroelectronics' advanced SuperMESH™3 technology, which combines the benefits of reduced on-resistance, reduced gate charge, and enhanced dv/dt capabilities. This Power MOSFET is particularly suited for use in high-efficiency power supplies, lighting applications, and power management solutions.

Key Features

• High Voltage Rating: With a drain-source voltage of 525 V, the STF11N52K3 is capable of handling high voltage applications, making it ideal for switch-mode power supplies and other power conversion systems.
• Low On-Resistance: The device features a low on-resistance of typically 0.28 ohms, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
• High Current Capability: Able to support a continuous current of 11 A, this MOSFET can manage significant power levels, essential for robust power applications.
• Enhanced dv/dt Capability: The STF11N52K3 is designed to withstand high dv/dt rates, offering better reliability and performance under fast-switching conditions.
• 100% Avalanche Tested: This guarantees that the MOSFET will perform reliably in applications that may experience unexpected voltage transients.

Applications

• Switch-mode power supplies (SMPS)
• LED lighting applications
• Power adapters and chargers
• DC-DC converters
• Power factor correction circuits

Package Details

The STF11N52K3 is housed in a TO-220FP package, which is designed for through-hole mounting. This package is widely used for its heat dissipation properties, making it suitable for high-power applications where maintaining a low junction temperature is crucial for reliability and performance.

Quality and Reliability

STMicroelectronics is renowned for its commitment to quality and reliability, and the STF11N52K3 is no exception. It is designed and manufactured to meet the highest industry standards, ensuring that it delivers consistent performance even under challenging conditions.