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STF13N60M2

Part No STF13N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 580pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 042913-STF13N60M2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF13N60M2 CAD Model

Description

STF13N60M2 - N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ M2 Power MOSFET in TO-220FP package

The STF13N60M2 is a high-performance N-channel Power MOSFET, part of the MDmesh™ M2 series from STMicroelectronics, designed to meet the stringent requirements of power conversion and switching applications. With its state-of-the-art technology, this device provides excellent RDS(on) per area combined with superior switching performance, making it an ideal choice for high-efficiency solutions.

This Power MOSFET operates at a drain-source voltage of 600V, which ensures that it can handle high voltage applications with ease. Its low on-resistance of 0.28 Ω, typical at 25°C, translates to reduced conduction losses, enhancing the overall efficiency of the system it is used in. With a continuous drain current of 11 A, the STF13N60M2 is capable of driving significant loads, making it versatile for a wide range of applications.

The device comes in a fully molded TO-220FP package, which offers excellent thermal performance and is suitable for through-hole mounting, providing ease of integration into various circuit designs. The MDmesh™ M2 technology utilizes an innovative proprietary vertical structure, which enables the MOSFET to achieve low gate charge and low crss, resulting in reduced switching losses.

The STF13N60M2 is designed to offer high dv/dt capability, ensuring robustness and reliability even under harsh switching conditions. This feature, along with the device's high avalanche ruggedness, makes it suitable for the most demanding applications, including switch-mode power supplies, LED lighting, welding equipment, and power factor correction circuits.

As part of STMicroelectronics' commitment to environmental sustainability, the STF13N60M2 is manufactured with eco-friendly materials and complies with the RoHS directive, minimizing the environmental impact. Engineers and designers seeking a reliable, high-performance Power MOSFET for their next project will find the STF13N60M2 an excellent choice that does not compromise on efficiency or performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3774 $50.9490
285+ $0.3535 $100.7475
440+ $0.3415 $150.2600
630+ $0.3177 $200.1510
820+ $0.3057 $250.6740
1,025+ $0.2938 $301.1450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 711,735 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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