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STF13NM50N

Part No STF13NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 960pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066340-STF13NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF13NM50N CAD Model

Description

The STF13NM50N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed with the advanced MDmesh™ II Plus™ technology. This MOSFET is part of the MDmesh™ family, which is well-known for its excellent efficiency and thermal performance. The STF13NM50N is optimized for a wide range of high voltage applications, including switch-mode power supplies, lighting, welding, and other high-performance power conversion applications.

Key Features

  • Voltage Rating: The STF13NM50N boasts a robust 500 V drain-source breakdown voltage (VDS), making it suitable for high voltage applications.
  • Low On-Resistance: With a typical on-resistance (RDS(on)) of just 0.22 ohms, this Power MOSFET ensures minimal conduction losses and improved efficiency.
  • High Current Capacity: It is capable of handling continuous drain currents (ID) up to 11 A, enabling high power density designs.
  • Reduced Gate Charge: Featuring a low gate charge (Qg), this device allows for faster switching speeds and further efficiency improvements in power switching applications.
  • Zener-protected: The gate-source of this MOSFET is protected by an integrated Zener diode, enhancing its robustness against voltage spikes and transients.

Applications

The STF13NM50N is ideal for a variety of applications where high efficiency and power density are required. These include:

  • Switch-mode power supplies (SMPS)
  • LED lighting solutions
  • DC-DC converters
  • Power factor correction (PFC) circuits
  • Welding equipment
  • High-performance power management systems

Package and Quality

Encased in a TO-220FP package, the STF13NM50N provides a compact solution with excellent thermal performance. STMicroelectronics ensures high standards of quality and reliability for their products, and the STF13NM50N is no exception, meeting stringent industry requirements.

For engineers and designers looking for a reliable and efficient Power MOSFET with a good balance between switching performance and on-state resistance, the STF13NM50N from STMicroelectronics is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8205 $59.2305
50+ $2.3146 $115.7300
78+ $2.2430 $174.9540
107+ $2.1702 $232.2114
138+ $2.0975 $289.4550
185+ $1.8803 $347.8555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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