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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1260pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 192 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066344-STF18N55M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF18N55M5 CAD Model

Description

STF18N55M5 - High Performance N-Channel MOSFET by STMicroelectronics

The STF18N55M5 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is a part of the MDmesh™ M5 series, which is renowned for its excellent energy efficiency and high power density. The STF18N55M5 is an ideal choice for a wide range of high-efficiency applications, including switch-mode power supplies, lighting, converters, and motor control systems.

Key Features

  • Low On-Resistance: The STF18N55M5 boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of 550V, this MOSFET can handle high voltage applications with ease, making it suitable for a variety of power conversion systems.
  • Fast Switching Performance: The device features fast switching characteristics, which are crucial for reducing switching losses in power electronic circuits.
  • Reduced Gate Charge: The low gate charge (Q<sub>g) of the STF18N55M5 leads to reduced power dissipation during switching, contributing to the efficiency of the overall system.
  • 100% Avalanche Tested: This MOSFET is guaranteed to withstand rugged operating conditions, having been thoroughly tested for avalanche ruggedness.

Applications

  • Switching regulators
  • DC/DC converters
  • Motor control drivers
  • LED lighting solutions
  • Power management systems

The STF18N55M5 is encapsulated in a TO-220FP package, which is known for its robustness and excellent thermal performance. This package allows for efficient heat dissipation, ensuring that the MOSFET operates within safe temperature limits even under high current conditions.

STMicroelectronics has designed the STF18N55M5 with the environment in mind; the device is compliant with the European Union’s RoHS directive, making it free from hazardous substances. This commitment to sustainability, combined with the MOSFET's high performance and reliability, makes the STF18N55M5 an excellent choice for designers looking to create energy-efficient and eco-friendly electronic products.

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