Introducing the STF26N65DM2 Power MOSFET by STMicroelectronics

The STF26N65DM2 is a state-of-the-art power MOSFET designed and manufactured by the renowned semiconductor company STMicroelectronics. This device is part of ST's MDmesh™ DM2 series, which is known for combining a high voltage super-junction MOSFET with a fast recovery diode. This integration ensures exceptional efficiency and performance in a wide range of applications.

Key Features

• Breakdown Voltage: The STF26N65DM2 boasts a high drain-source breakdown voltage of 650V, making it suitable for high-voltage applications.
• Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.190 Ω, this MOSFET ensures minimal conduction losses, enhancing overall efficiency.
• High Current Capability: This device can handle continuous drain currents up to 23 A, providing robust performance for demanding power applications.
• Fast Recovery Diode: The integrated fast recovery diode is optimized for high-frequency operation and soft recovery, which reduces electromagnetic interference (EMI) and enhances reliability.

Applications

The STF26N65DM2 is ideal for a variety of power applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• Welding Equipment
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• High-Performance Power Converters

Advantages

STMicroelectronics' STF26N65DM2 brings several advantages to the table:

• Energy Efficiency: The device's low on-resistance and high breakdown voltage contribute to reduced power losses and higher efficiency in power conversion systems.
• Thermal Management: The MOSFET's package is designed for excellent thermal performance, ensuring stability and longevity even under high-temperature conditions.
• Robustness: The STF26N65DM2 is engineered to withstand harsh environments and provide reliable operation over its lifetime.

Technical Specifications

Here are some additional technical specifications for the STF26N65DM2:

• Max Junction Temperature (T<sub>j): 150°C
• Gate Charge (Q<sub>g): 90 nC
• Input Capacitance (C<sub>iss): 4300 pF
• Package: TO-220FP

For designers and engineers looking for a reliable and efficient power MOSFET, the STF26N65DM2 from STMicroelectronics offers a compelling solution that meets the needs of modern high-voltage power applications.