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STF8NM60ND

Part No STF8NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 560pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 015770-STF8NM60ND
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF8NM60ND CAD Model

Description

The STF8NM60ND is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is part of the MDmesh™ II Plus low Qg series and is specifically engineered to deliver exceptional efficiency, making it an ideal choice for a wide range of applications, including switch-mode power supplies, LED lighting, DC-AC inverters for solar energy systems, and motor control circuits.

Key Features

  • Device Type: N-channel Power MOSFET
  • Technology: MDmesh™ II Plus low Qg
  • Drain-source Voltage (V<sub>DS): 600V - This high voltage rating allows the MOSFET to handle a broad range of applications, particularly where higher voltage operation is required.
  • Continuous Drain Current (I<sub>D): 6A - The device can continuously conduct up to 6 amperes, ensuring robust performance for a variety of power tasks.
  • Gate Charge (Qg): Low - The low gate charge improves the switching performance, leading to increased efficiency and reduced power losses.
  • R<sub>DS(on): Low on-resistance - This feature minimizes conduction losses and enhances overall efficiency.
  • Package: TO-220FP - The TO-220FP package is widely used and known for its good thermal performance, making it suitable for medium power applications.

Applications

The STF8NM60ND is versatile and can be used in numerous applications. Some of the most common uses include:

  • Switch-mode power supplies (SMPS)
  • LED lighting systems
  • DC-AC inverters for photovoltaic solar panel systems
  • High-efficiency DC-DC converters
  • Motor control circuits

Advantages

Choosing the STF8NM60ND MOSFET for your electronic designs offers several advantages:

  • Increased system efficiency due to low on-resistance and gate charge
  • High voltage capability suitable for a variety of power applications
  • Reliable performance with STMicroelectronics' proven semiconductor technology
  • Compatibility with standard manufacturing processes, thanks to its TO-220FP package

With its robust design and advanced technology, the STF8NM60ND from STMicroelectronics stands out as a top choice for designers looking to enhance power efficiency and reliability in their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0442 $51.7514
41+ $2.4979 $102.4139
62+ $2.4198 $150.0276
86+ $2.3417 $201.3862
111+ $2.2637 $251.2707
148+ $2.0295 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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