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STF9N80K5

Part No STF9N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF9N80
Other Names 497-16493-5
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278023-STF9N80K5
Ultra Librarian 3D Model Ultra Librarian STF9N80K5 CAD Model

Description

STF9N80K5 - N-channel MOSFET by STMicroelectronics

The STF9N80K5 is a high-performance N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to meet the demands of a wide range of electronic applications, offering an excellent balance between on-resistance and gate charge. The device is well-suited for high-efficiency power management tasks in various circuits and is a reliable choice for designers looking to enhance system performance and reduce energy consumption.

With a drain-source voltage (V<sub>DS) of 800V, the STF9N80K5 can handle high voltages, making it an ideal choice for applications requiring robust voltage capabilities. The device also boasts a continuous drain current (I<sub>D) of up to 7.5A, which allows it to drive significant loads without overheating or performance degradation. The low threshold voltage ensures that the MOSFET can be controlled with lower gate voltages, which is beneficial for low-power applications and helps to minimize power loss.

The STF9N80K5 features a low on-resistance (R<sub>DS(on)), which is a critical parameter for power efficiency. A lower R<sub>DS(on) means less power is dissipated as heat, leading to better energy efficiency and reliability. This characteristic, combined with the fast switching speed of the MOSFET, contributes to reduced switching losses and improved overall system efficiency.

Manufactured with STMicroelectronics' advanced MDmesh™ K5 technology, the STF9N80K5 is optimized for high switching frequency applications. The technology ensures that the device exhibits reduced gate charge (Q<sub>g), which translates to lower switching losses and improved dynamic performance. This makes the MOSFET an excellent choice for switched-mode power supplies, LED lighting solutions, and other power conversion applications.

The STF9N80K5 is provided in a surface-mount TO-220FP package, which is known for its robustness and good thermal performance. The package design allows for efficient heat dissipation, ensuring the MOSFET operates within safe temperature limits even under high current conditions. Additionally, the device is compliant with RoHS and Halogen-Free standards, which reflects STMicroelectronics' commitment to environmental sustainability.

Overall, the STF9N80K5 from STMicroelectronics is a versatile and efficient solution for designers looking to incorporate a reliable N-channel MOSFET into their power management systems.

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