STFH18N60M2 - N-channel 600 V, 0.190 Ohm typ., 17 A MDmesh™ M2 Power MOSFET in H2PAK-2 Package

The STFH18N60M2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed with the innovative MDmesh™ M2 technology. This device is tailored to deliver high efficiency and performance for a wide range of power applications. Enclosed in a robust H2PAK-2 package, the STFH18N60M2 offers exceptional thermal performance, making it suitable for demanding environments.

With a drain-source voltage (V<sub>DS) of 600V, the STFH18N60M2 is well-suited for high voltage applications, providing a reliable solution for switching operations. The MOSFET boasts a low on-resistance (R<sub>DS(on)) of just 0.190 Ohm typical, which minimizes conduction losses and enhances overall efficiency. A continuous drain current (I<sub>D) of 17A ensures that the device can handle significant power without compromising on performance.

The innovative MDmesh™ M2 technology integrates a vertical structure, which optimizes the R<sub>DS(on) area figure of merit. This results in reduced switching losses, making the STFH18N60M2 an excellent choice for high-efficiency power supplies, lighting applications, welding equipment, and solar inverters. The device's fast recovery diode also contributes to its high-speed switching capabilities and reduced switching noise, further enhancing its performance in high-frequency circuits.

Additional features of the STFH18N60M2 include a 100% avalanche tested design, ensuring ruggedness and reliability in the field. The device also provides a low gate charge (Q<sub>g), which reduces the power required to drive the MOSFET, thus saving energy in the application. The H2PAK-2 package is designed for easy mounting on a printed circuit board (PCB) and is compatible with standard surface-mount technology (SMT) processes, facilitating integration into a wide variety of designs.

STMicroelectronics' commitment to environmental sustainability is reflected in the STFH18N60M2, as it is compliant with the European Union directives RoHS (Restriction of Hazardous Substances) and is 100% lead-free. Customers can trust that they are choosing a product that not only meets high performance standards but also aligns with environmental regulations.

Overall, the STFH18N60M2 Power MOSFET is a reliable and efficient solution for designers looking to optimize their power management systems with a component that offers high voltage capability, low on-resistance, and fast switching speeds.