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STFI31N65M5

Part No STFI31N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1865 pF @ 100 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak
Base Product Number STFI31N
Other Names 497-13162,-497-13162
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278030-STFI31N65M5
Ultra Librarian 3D Model Ultra Librarian STFI31N65M5 CAD Model

Description

STFI31N65M5 - High-Performance N-Channel MOSFET by STMicroelectronics

The STFI31N65M5 is a state-of-the-art N-channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This powerful transistor is part of ST's MDmesh™ M5 series, which utilizes innovative technology to enhance performance and energy efficiency in a wide range of applications.

Key Features:

  • High Voltage Capability: The STFI31N65M5 is designed to handle high voltages, with a drain-source voltage (V<sub>DS) of 650V, making it suitable for high-voltage power conversion applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.190 Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High Current Rating: The device can support a continuous drain current (I<sub>D) of up to 31A, providing robust performance for demanding power applications.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) enhances the switching performance, which is critical for high-frequency power converters and inverters.
  • Fast Recovery Diode: An integrated fast body diode ensures rapid recovery, which is essential for reducing noise and improving reliability in switching applications.

Applications:

The versatility of the STFI31N65M5 MOSFET makes it an excellent choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High-Efficiency DC/DC Converters
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Advanced Technology:

STMicroelectronics' MDmesh™ technology is a breakthrough in the field, providing enhanced power handling capabilities with lower conduction and switching losses. This technology, combined with the STFI31N65M5's robust package, ensures optimal thermal performance and longevity, even in challenging environments.

Package Information:

The STFI31N65M5 comes in an ISOTOP package that is designed for improved heat dissipation and space-saving on PCBs, making it an ideal choice for compact and high-power density designs.

Overall, the STFI31N65M5 MOSFET is an exceptional component for designers looking to create efficient, reliable, and high-performance power management systems. With its advanced features and proven technology from STMicroelectronics, this MOSFET stands out as a top choice for cutting-edge electronic designs.

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