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STGB10NB60ST4

Part No STGB10NB60ST4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 29A 80W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 29A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 1.75V @ 15V, 10A
Maximum Power Dissipation 80W
Total Switching Energy(Ets) 600μJ (on), 5mJ (off)
Input Type Standard
Gate Charge 33nC
Turn-on and Turn-off delay time 700ns/1.2μs
Testing Conditions 480V, 10A, 1 kOhm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1102994-STGB10NB60ST4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGB10NB60ST4 CAD Model

Description

STGB10NB60ST4 - IGBT from STMicroelectronics

The STGB10NB60ST4 is a high-performance insulated-gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is designed to meet the demands of a wide range of high-power switching applications, offering a perfect blend of low conduction losses and high switching speeds. With its robust and energy-efficient design, the STGB10NB60ST4 is particularly well-suited for applications such as motor drives, uninterruptible power supplies (UPS), and inverter circuits for renewable energy sources.

Featuring a maximum collector-emitter voltage (V<sub>CE) of 600V, the STGB10NB60ST4 can handle significant voltage stress during operation, making it reliable for high-voltage applications. The device boasts a collector current (I<sub>C) rating of 10A, ensuring it can manage substantial power levels. Additionally, its low gate charge and minimized total conduction losses contribute to its overall efficiency and performance.

The STGB10NB60ST4 incorporates STMicroelectronics' advanced trench gate field-stop technology, which enables the device to achieve an optimal trade-off between switching performance and on-state behavior. This technology helps in reducing the turn-off energy (E<sub>off) and improving the device's robustness against hard switching conditions. Moreover, the IGBT is characterized by a very tight parameter distribution, which results in consistent performance and simplifies the design process for engineers.

The package of the STGB10NB60ST4 is D2PAK, a surface-mount package that is compact and offers good thermal performance, making it easy to integrate into various circuit designs. The device also features a co-packaged fast recovery diode, which provides additional protection against over-voltages and enhances the efficiency of the switching circuit by reducing recovery losses.

In summary, the STGB10NB60ST4 from STMicroelectronics is a robust and efficient IGBT that is ideal for a wide array of power applications. Its cutting-edge technology, high voltage and current handling capabilities, and compact surface-mount package make it a top choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1056 $60.8080
130+ $0.9071 $117.9230
200+ $0.8789 $175.7800
275+ $0.8505 $233.8875
355+ $0.8221 $291.8455
475+ $0.7371 $350.1225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,800 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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