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STGW45NC60WD

Part No STGW45NC60WD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 45 A - 600 V ultra fast IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series PowerMESH
Packaging Tube
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 90A
Current - Collector Pulsed (Icm) 230A
Vce(on) (Maximum) @ Vge, Ic 2.6V @ 15V, 30A
Power - Max 285W
Switching Energy 302μJ (on), 349μJ (off)
Input Type Standard
Gate Charge 126nC
Td (on/off) @ 25°C 33ns/168ns
Test Condition 390V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 45ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 Long Leads
Win Source Part Number 1261050-STGW45NC60WD
Manufacturer Homepage www.st.com
Family Name STGW45NC60WD
Introduction Date June 05, 2008
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW45NC60WD CAD Model

Description

  

STGW45NC60WD - IGBT from STMicroelectronics

  

The STGW45NC60WD is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This IGBT is designed to combine the high-speed performance of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor, making it an ideal choice for a wide range of high-efficiency applications.

  

Key Features

  
        
  • Voltage Rating: The device boasts a robust collector-emitter voltage (VCE) of 600V, which enables it to handle high-power applications with ease.
  •     
  • Current Capability: With a continuous collector current (IC) rating of 45A at 25°C, it can drive substantial loads without overheating.
  •     
  • Low On-Resistance: The STGW45NC60WD offers a low on-state voltage, which translates to reduced conduction losses and improved overall efficiency.
  •     
  • High-Speed Switching: Fast switching characteristics make this IGBT suitable for high-frequency operations, thus increasing the efficiency in applications such as converters and inverters.
  •     
  • Short-Circuit Rating: It is equipped with a short-circuit withstand time of 10µs, providing robustness and reliability under fault conditions.
  •     
  • Co-Packaged Diode: The device includes a free-wheeling diode with a similar high-speed performance, which is essential for inductive load applications.
  •   
  

Applications

  

The STGW45NC60WD is versatile and can be used in a variety of applications, including:

  
        
  • Uninterruptible Power Supplies (UPS)
  •     
  • Motor Drives
  •     
  • Power Factor Correction Circuits
  •     
  • Inductive Heating
  •     
  • High-Frequency Converters and Inverters
  •   
  

Advanced Technology

  

STMicroelectronics has incorporated state-of-the-art technology into the STGW45NC60WD, ensuring minimal gate charge and low internal capacitances, which result in reduced switching losses. The device is also designed with a robust and durable package, ensuring a long operational lifespan even under stressful conditions.

  

With its exceptional performance, reliability, and efficiency, the STGW45NC60WD from STMicroelectronics stands out as a superior choice for designers looking to optimize their power management systems.

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