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STGW60H65DFB-4

Part No STGW60H65DFB-4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT / IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-4
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Power - Max 375 W
Switching Energy 346µJ (on), 1.161mJ (off)
Input Type Standard
Gate Charge 306 nC
Td (on/off) @ 25°C 65ns/261ns
Test Condition 400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr) 60 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Base Product Number STGW60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 600
Win Source Part Number 1014357-STGW60H65DFB-4
Ultra Librarian 3D Model Ultra Librarian STGW60H65DFB-4 CAD Model

Description

STGW60H65DFB-4: High-Efficiency IGBT from STMicroelectronics

The STGW60H65DFB-4 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. This device is designed for a wide range of high-power applications, where efficiency and reliability are of utmost importance. With its cutting-edge features, the STGW60H65DFB-4 is an excellent choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Advanced Technology and Design

The STGW60H65DFB-4 is built using STMicroelectronics' advanced trench gate field-stop technology, which provides superior performance in terms of switching speed and energy efficiency. This technology enables the device to operate at lower on-state voltages, resulting in reduced conduction losses and improved overall system efficiency.

Robust Performance Characteristics

With a maximum collector-emitter voltage of 650V and a continuous collector current rating of 60A at 25°C, the STGW60H65DFB-4 is capable of handling high power densities with ease. The device also boasts a low collector-emitter saturation voltage (V_CE(sat)) of typically 1.70V, which contributes to lower power dissipation during operation.

Enhanced Thermal Management

The STGW60H65DFB-4 comes in a TO-247 long leads package, which is known for its excellent thermal characteristics. The package design ensures efficient heat dissipation, which is critical for maintaining stability and prolonging the lifespan of the device in demanding environments.

Integrated Features for Safety and Reliability

STMicroelectronics has incorporated several features into the STGW60H65DFB-4 to enhance its safety and reliability. The device includes a co-packaged fast recovery diode, which provides protection against reverse voltage transients. Moreover, it is characterized by a tight parameter distribution, which results in predictable and consistent performance across various devices and applications.

Environmental Compliance

Committed to environmental sustainability, STMicroelectronics ensures that the STGW60H65DFB-4 complies with RoHS regulations, making it a suitable choice for eco-friendly applications and for manufacturers looking to minimize the environmental impact of their products.

In summary, the STGW60H65DFB-4 from STMicroelectronics is a powerful and efficient IGBT designed to meet the rigorous demands of modern high-power electronic systems. Its advanced technology, robust performance, and commitment to environmental standards make it an ideal component for engineers looking to optimize their designs for both performance and sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.9414 $53.6484
12+ $8.3646 $100.3752
19+ $8.0762 $153.4478
27+ $7.4993 $202.4811
35+ $7.2109 $252.3815
44+ $6.9224 $304.5856
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Availability: 29 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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