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STGWA50IH65DF

Part No STGWA50IH65DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series IH
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 300 W
Switching Energy 284µJ (off)
Input Type Standard
Gate Charge 158 nC
Td (on/off) @ 25°C -/260ns
Test Condition 400V, 50A, 22Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA50
Other Names 497-18498
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277368-STGWA50IH65DF
Ultra Librarian 3D Model Ultra Librarian STGWA50IH65DF CAD Model

Description

The STGWA50IH65DF, from the renowned manufacturer STMicroelectronics, represents a leap forward in the field of power electronics. This high-efficiency IGBT (Insulated Gate Bipolar Transistor) is designed to cater to a variety of applications, including but not limited to motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Product Features:

  • High Voltage Capability: This IGBT is capable of handling voltages up to 650V, making it suitable for high voltage applications and ensuring robust performance in a wide range of electrical environments.
  • Low On-Resistance: With a low on-state voltage drop, the STGWA50IH65DF ensures high efficiency, which is critical for reducing energy waste and heat dissipation in power-intensive applications.
  • High Current Rating: This device can support a continuous collector current of up to 50A at 25°C, allowing it to manage significant power levels, which is essential for heavy-duty operations.
  • Fast Switching Speed: The IGBT boasts a fast switching speed, which is crucial for minimizing switching losses and improving overall system performance.
  • Co-Packaged Diode: It comes with a co-packaged free-wheeling diode, which provides protection against reverse voltage and reduces the number of external components required in a circuit.

Advanced Technology:

The STGWA50IH65DF utilizes STMicroelectronics' advanced Trench Gate Field-Stop technology, which enables the device to achieve optimal performance by combining low conduction and switching losses with high ruggedness and reliability.

Thermal Management:

Effective thermal management is provided by the device's TO-247 long leads package, which ensures efficient heat dissipation and maintains stability even under high-temperature operating conditions.

Applications:

Due to its robustness and high-performance characteristics, the STGWA50IH65DF is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Its versatility makes it an ideal component for a wide array of industrial and consumer applications, where power density and efficiency are of paramount importance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1829 $50.2067
56+ $1.7911 $100.3016
87+ $1.7351 $150.9537
120+ $1.6792 $201.5040
155+ $1.6232 $251.5960
207+ $1.4553 $301.2471
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 59,010 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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