STH145N8F7-2AG - STMicroelectronics

The STH145N8F7-2AG is a high-performance, N-channel 80V, 120A MOSFET from STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is designed to deliver outstanding efficiency and power density, making it an ideal choice for a wide range of applications, including but not limited to, switch-mode power supplies (SMPS), high-efficiency converters, and power management solutions.

Constructed using STMicroelectronics' advanced STripFET™ F7 technology, the STH145N8F7-2AG boasts extremely low on-resistance (R<sub>DS(on)) of just 8.7 mΩ max, which significantly reduces conduction losses. This feature, coupled with an excellent figure of merit (FOM), ensures high efficiency in power conversion, leading to energy savings and reduced thermal management requirements.

The device is housed in a robust and compact H2PAK-2 package, which not only provides excellent thermal performance but also ensures a high level of reliability and durability in demanding environments. The STH145N8F7-2AG is also characterized by its exceptional avalanche ruggedness, making it suitable for applications that may experience demanding switching conditions or unexpected voltage transients.

Key features of the STH145N8F7-2AG include:

• 80V Drain-source voltage (V<sub>DS)
• 120A Continuous drain current (I<sub>D) at 25°C
• Low threshold voltage (V<sub>GS(th))
• 100% avalanche tested for enhanced reliability
• High dv/dt capability

STMicroelectronics also ensures that the STH145N8F7-2AG meets the highest standards of environmental compliance, being RoHS and Halogen-free compliant. This commitment to environmental sustainability makes the product suitable for eco-conscious applications and manufacturers looking to create green products.

Whether you are designing power supplies for computing, telecom infrastructures, or industrial applications, the STH145N8F7-2AG offers a combination of performance, efficiency, and reliability that can help you achieve your design goals. Its robustness and efficiency make it a smart choice for engineers who demand the best in power MOSFET technology.