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STH180N10F3-2

Part No STH180N10F3-2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A H2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114.6nC @ 10V
Max Input Capacitance 6665pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 315W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package H2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab) Variant
Win Source Part Number 031199-STH180N10F3-2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STH180N10F3-2 CAD Model

Description

STH180N10F3-2 - High-Performance N-Channel MOSFET

The STH180N10F3-2 is a state-of-the-art N-channel MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and general-purpose switching applications.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The device features an exceptionally low on-resistance, which translates into reduced conduction losses and enhances overall power efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating, the STH180N10F3-2 can handle high current loads, making it suitable for demanding power applications.
  • 100% Avalanche Tested: This MOSFET is guaranteed to withstand high-energy pulses in the avalanche and commutation modes, ensuring robust performance and long-term reliability.
  • Low Gate Charge (Q<sub>g): The low gate charge facilitates faster switching speeds, contributing to improved performance in high-frequency circuits.

Applications

The STH180N10F3-2 is versatile and can be implemented in a variety of applications. Its high efficiency and power handling capabilities make it particularly well-suited for:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power management systems
  • DC-AC inverters for solar energy systems
  • DC-DC converters
  • Motor drives and control units
  • Automotive applications and powertrain systems

Package and Environmental Compliance

The STH180N10F3-2 comes in a robust and compact H2PAK-2 package, designed for optimal thermal performance and space-saving on the PCB. Additionally, it complies with the RoHS directive, making it an environmentally friendly choice for manufacturers looking to create green products.

In summary, the STH180N10F3-2 from STMicroelectronics represents a high-performance solution for designers seeking a reliable N-channel MOSFET that combines low power losses with high current handling and fast switching capabilities, all packed in an eco-friendly and space-efficient package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8299 $50.9382
38+ $2.6508 $100.7304
59+ $2.5612 $151.1108
84+ $2.3821 $200.0964
110+ $2.2926 $252.1860
137+ $2.2030 $301.8110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,505 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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