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STI10N62K3

Part No STI10N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 620V 8.4A I2PAK  /  N-Channel 620 V 8.4A (Tc) 125W (Tc) Through Hole I2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH3™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI10N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-12256,-497-12256
Standard Package 50
Win Source Part Number 994144-STI10N62K3
Ultra Librarian 3D Model Ultra Librarian STI10N62K3 CAD Model

Description

STI10N62K3 - N-channel 620 V, 0.29 Ohm typ., 10 A MDmesh K3 Power MOSFET in a TO-220FP package from STMicroelectronics

The STI10N62K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is part of the MDmesh™ K3 series, which is renowned for its excellent efficiency and thermal performance. The STI10N62K3 is designed to meet the rigorous demands of power supply applications, offering a robust and reliable solution for designers.

With a drain-source voltage (V<sub>DS) of 620 V, the STI10N62K3 is well-suited for high-voltage applications. Its low on-resistance of just 0.29 Ohm typical ensures efficient power conversion, which is critical in minimizing energy loss and heat generation in power circuits. This characteristic, combined with a continuous drain current (I<sub>D) of 10 A, makes it an excellent choice for switching applications requiring high efficiency and power density.

The device comes in a TO-220FP package, which is widely used in the industry and known for its good thermal performance and ease of mounting onto a printed circuit board (PCB). The package ensures that the MOSFET can handle high currents and dissipate heat effectively, thus maintaining stability and prolonging the lifespan of the product.

Key features of the STI10N62K3 include a fast recovery diode and Zener-protection that enhance the robustness of the device against harsh operating conditions. These features make the MOSFET an ideal choice for applications such as switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and welding equipment.

STMicroelectronics has also incorporated state-of-the-art technology in the STI10N62K3 to reduce the Miller capacitance and charge, facilitating faster and more reliable switching performance. This innovation contributes to the overall efficiency and performance of the device in a variety of power applications.

In conclusion, the STI10N62K3 from STMicroelectronics is a powerful and efficient solution for designers looking to improve the performance and reliability of their power management systems. Its combination of high-voltage capability, low on-resistance, and robust package makes it a versatile and valuable component in a wide range of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1487 $64.4610
70+ $1.7630 $123.4100
105+ $1.7079 $179.3295
140+ $1.6528 $231.3920
185+ $1.5978 $295.5930
245+ $1.4324 $350.9380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,280 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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