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STI16NM50N

Part No STI16NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI16N
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278098-STI16NM50N
Ultra Librarian 3D Model Ultra Librarian STI16NM50N CAD Model

Description

STI16NM50N Power MOSFET by STMicroelectronics

The STI16NM50N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced Technology: The STI16NM50N utilizes STMicroelectronics' MDmesh™ technology, which combines a vertical structure with a strip layout to achieve low on-resistance and reduced gate charge. This results in a high-efficiency power MOSFET that is well-suited for high-frequency applications.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 500V, the STI16NM50N is capable of handling high voltage applications, making it ideal for industrial and consumer electronics that require robust power management.
  • Low On-Resistance: The on-resistance (R<sub>DS(on)) of this device is exceptionally low, which minimizes conduction losses and improves overall system efficiency.
  • High Current Capacity: The STI16NM50N can support a continuous drain current (I<sub>D) of up to 16A, making it suitable for high-power applications.
  • Enhanced Thermal Performance: With an excellent thermal design, the STI16NM50N can operate at higher temperatures while maintaining its performance, which is crucial for applications that generate significant heat.

Applications

  • Switch-mode power supplies (SMPS)
  • Power inverters
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions

The STI16NM50N is offered in a TO-220 package, which is widely used and recognized for its ease of handling and mounting. This package provides good thermal and electrical performance, making it a popular choice for medium to high power applications. The combination of advanced technology, high voltage and current capabilities, low on-resistance, and excellent thermal characteristics make the STI16NM50N a robust and versatile component for designers and engineers looking to optimize their power management systems.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official STMicroelectronics website or contact their local ST sales office.

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