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STI19NM65N

Part No STI19NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI19N
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278093-STI19NM65N
Ultra Librarian 3D Model Ultra Librarian STI19NM65N CAD Model

Description

The STI19NM65N is a state-of-the-art MDmesh™ V Power MOSFET, designed and manufactured by STMicroelectronics. This high-efficiency component is a part of ST's innovative portfolio of power semiconductors that are engineered to deliver superior performance in a wide range of electronic applications, particularly in power supply and conversion systems.

Key Features

  • Advanced MDmesh™ V Technology: Utilizes the fifth generation of ST's proprietary super-junction technology, which provides an optimal balance between on-resistance and capacitance, leading to high efficiency and reduced switching losses.
  • Low On-Resistance (R<sub>DS(on)): Features a very low on-state resistance, which minimizes conduction losses and improves overall system efficiency.
  • High Voltage Capability: With a breakdown voltage of 650V, this MOSFET can handle high voltage applications with ease, making it suitable for a broad range of power supply requirements.
  • Fast Switching Speed: The device's fast switching characteristics ensure reduced switching losses, which is critical for high-frequency power converters.
  • Robustness: The STI19NM65N is designed for enhanced robustness and reliability, ensuring a long operational lifespan even under stressful conditions.
  • Reduced Gate Charge (Q<sub>g): A lower gate charge facilitates faster switching and reduced driving power, which is beneficial for applications where efficiency is paramount.

Applications

The versatility of the STI19NM65N allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • High Efficiency Power Management Systems

With its robust design and high performance, the STI19NM65N from STMicroelectronics is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Its advanced features and capabilities make it a key component in driving innovation across various industries that demand high-quality power solutions.

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