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STI23NM60ND

Part No STI23NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 19.5A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2050pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066395-STI23NM60ND
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STI23NM60ND CAD Model

Description

STI23NM60ND Power MOSFET by STMicroelectronics

The STI23NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of STMicroelectronics' MDmesh™ V series, which is renowned for its excellent energy efficiency and thermal performance. The STI23NM60ND is designed to meet the rigorous demands of a wide range of power applications, making it an ideal choice for designers looking to optimize power density and efficiency.

Key Features

  • Low On-Resistance: The STI23NM60ND boasts a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency. This feature makes it suitable for high-current applications.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of up to 600V, this MOSFET can handle high voltage operations, providing reliable performance in applications that require high breakdown voltage.
  • Fast Switching Speed: The fast switching capability of the STI23NM60ND reduces switching losses and improves the MOSFET's performance in high-frequency power conversion systems.
  • Low Gate Charge: The low gate charge (Q<sub>g) of the STI23NM60ND allows for efficient switching performance and reduces the power required to drive the MOSFET, which can be particularly beneficial in portable and energy-sensitive applications.
  • 100% Avalanche Tested: Ensuring robustness and reliability, each unit is tested for avalanche ruggedness, providing additional security in applications that may be subject to high-stress conditions.

Applications

The versatility of the STI23NM60ND makes it suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Power Factor Correction (PFC) Circuits
  • Motor Control Systems
  • Inverters for Renewable Energy Sources

With its combination of high-voltage capability, low on-resistance, fast switching, and robust design, the STI23NM60ND from STMicroelectronics stands out as a superior choice for engineers and designers seeking to enhance the performance and reliability of their power management systems.

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