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STI24N60M2

Part No STI24N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 600 V, 0.168  typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK | MOSFET N-CH 600V 18A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1060pF at 100V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK (TO-262)
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261092-STI24N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STI24N60M2 CAD Model

Description

STI24N60M2 - STMicroelectronics N-Channel MOSFET

The STI24N60M2 is a state-of-the-art N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and reliability for a broad range of applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • High Voltage Capability: The STI24N60M2 operates at a maximum voltage of 600V, making it suitable for high-voltage applications.
  • Low On-Resistance (R<sub>DS(on)): With an on-resistance as low as 0.165 Ω, this MOSFET ensures minimal power loss and heat generation during operation.
  • High Current Rating: The device can handle continuous currents up to 18A, allowing it to manage significant power levels.
  • Fast Switching Speed: Fast switching characteristics of the STI24N60M2 contribute to improved performance in high-frequency circuits.
  • Enhanced dv/dt Capability: This MOSFET is engineered to withstand high dv/dt rates, ensuring stable operation under fluctuating conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing robust performance even under harsh conditions.
  • Low Gate Charge: The MOSFET features a low gate charge, which reduces the energy needed to turn the device on and off, thereby improving overall efficiency.

Applications

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • High-efficiency DC-DC converters
  • Motor control systems
  • Power management solutions

The STI24N60M2 is housed in a TO-220 package, which is widely used and recognized for its ease of integration into various circuit designs. Its robust construction and thermal characteristics ensure that it can be used in environments requiring high reliability and endurance. With the combination of high-performance features and proven durability, the STI24N60M2 from STMicroelectronics represents a superior choice for designers looking to optimize their power management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2715 $52.3440
38+ $2.6843 $102.0034
58+ $2.6005 $150.8290
80+ $2.5166 $201.3280
103+ $2.4327 $250.5681
138+ $2.1810 $300.9780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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