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STI24NM65N

Part No STI24NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 19A I2PAK  /  N-Channel 650 V 19A (Tc) 160W (Tc) Through Hole I2PAK
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI24N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 978459-STI24NM65N
Ultra Librarian 3D Model Ultra Librarian STI24NM65N CAD Model

Description

The STI24NM65N is a state-of-the-art MDmesh™ V Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is a part of the N-channel MOSFET series, engineered to provide high efficiency and power density for a wide range of applications, including switch-mode power supplies, lighting, welding, and solar inverters.

Key Features

  • Advanced Technology: Built on the innovative MDmesh™ V technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and excellent switching performance.
  • High Voltage Rating: With a maximum voltage rating of 650V, the STI24NM65N can handle high voltage applications with ease, making it ideal for industrial and power management systems.
  • Low On-Resistance: The device offers an extremely low on-resistance (Rds(on)) of just 0.190 Ω, which enhances overall efficiency by minimizing conduction losses.
  • High Current Capacity: Capable of supporting a continuous drain current (Id) of up to 18A, ensuring robust performance for high-power applications.
  • Reduced Gate Charge: A low gate charge (Qg) facilitates faster switching, which is crucial for improving the efficiency of power conversion circuits.
  • 100% Avalanche Tested: Guarantees reliable operation even under extreme conditions, enhancing the durability and lifespan of the device.

Applications

The versatility of the STI24NM65N makes it suitable for a diverse range of applications. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Applications
  • High-Efficiency DC-DC Converters
  • Welding Equipment
  • Solar Power Inverters
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STI24NM65N is no exception, as it is designed to meet stringent quality standards and is produced in state-of-the-art manufacturing facilities. Customers can trust in the reliability and performance of this MOSFET for their critical power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.6811 $61.4488
19+ $6.3024 $119.7456
29+ $6.1055 $177.0595
40+ $5.9085 $236.3400
51+ $5.7116 $291.2916
68+ $5.1207 $348.2076
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,110 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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