The STI6N80K5 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of the SuperMESH™ K5 series, which is renowned for its excellent energy efficiency and performance in high-voltage applications.

Key Features

• High Voltage Capability: With an 800V drain-source breakdown voltage (V<sub>DS), the STI6N80K5 is well-suited for applications that require high voltage operation.
• Low On-Resistance: The on-resistance (R<sub>DS(on)) is as low as 4 Ω typical, ensuring minimal power loss and improved efficiency during operation.
• High Current Rating: It can handle continuous drain currents (I<sub>D) up to 5.6 A, making it capable of powering a wide range of devices.
• Reduced Gate Charge: The device features a reduced gate charge (Q<sub>g), which leads to lower switching losses and faster switching speeds.
• TO-220FP Package: The TO-220FP package provides a good balance between thermal performance and size, making it suitable for various applications.

Applications

The STI6N80K5 is versatile and can be used in a variety of applications including:

• Switching applications
• Power supplies
• Power adapters
• LED lighting
• High-efficiency converters

Benefits

The STI6N80K5 offers numerous benefits to designers and engineers. Its high voltage capability allows for reliable operation in demanding environments, while its low on-resistance and high current rating contribute to reduced power dissipation and improved thermal management. The reduced gate charge enables high-speed switching, which is essential for modern power electronics. With these features, the STI6N80K5 is an excellent choice for enhancing the performance and efficiency of electronic systems.

For more detailed information, including datasheets, technical documentation, and support, visit the STMicroelectronics website or contact your local ST sales office.