The STL35N6F3 is a high-performance Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of the STripFET™ VI DeepGATE™ technology series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

With its 60V drain-source voltage (V<sub>DS), the STL35N6F3 is designed to deliver efficient power management in a wide array of applications. This includes, but is not limited to, DC-DC converters, motor control circuits, and high-efficiency switching for power supplies. The STL35N6F3 is particularly well-suited for applications requiring high power density and energy efficiency.

Key Features:

• Low Threshold Voltage: Ensures low gate drive losses, contributing to the overall efficiency of the system.
• Low On-Resistance: The device boasts an R<sub>DS(on) of just 3.5mΩ max, which minimizes conduction losses and improves power efficiency.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 35A, the MOSFET can handle high current applications with ease.
• 100% Avalanche Tested: Guarantees robustness and reliability in real-world applications.
• Low Gate Charge: Reduces switching losses, which is critical for high-frequency power switching applications.

Applications:

• Switch Mode Power Supplies (SMPS)
• DC/DC Converters
• Motor Control Systems
• LED Lighting Solutions
• Automotive Applications

The STL35N6F3 offers a compact and energy-efficient solution for designers looking to optimize their power management systems. Its robustness and reliability, combined with STMicroelectronics' commitment to quality, make it a preferred choice for engineers and professionals in the electronics industry.