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STL8N10F7

Part No STL8N10F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V POWERFLAT / N-Channel 100 V 35A (Tc) 3.5W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series DeepGATE™, STripFET™ VII
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V
Power Dissipation (Max) 3.5W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN
Base Product Number STL8
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-14991-6,497-14991-1,-497-14991-1,-497-14991-2,497-14991-2,497-14991-6
Standard Package 3,000
Win Source Part Number 1004819-STL8N10F7
Ultra Librarian 3D Model Ultra Librarian STL8N10F7 CAD Model

Description

STL8N10F7 Power MOSFET by STMicroelectronics

The STL8N10F7 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is part of STMicroelectronics' STripFET F7 series, which is recognized for its low on-resistance and low gate charge, making it a perfect choice for power conversion and management tasks.

Key Features

  • Low On-Resistance (RDS(on)): The STL8N10F7 boasts an exceptionally low drain-source on-resistance, ensuring minimal power loss and heat generation during operation.
  • High Drain Current: With a maximum continuous drain current of 80 A, this MOSFET can handle high current applications with ease.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, providing additional reliability and robustness in demanding situations.
  • Enhanced Threshold Voltage: The device features a threshold voltage optimized for a wide range of applications, ensuring efficient performance across different load conditions.
  • Low Gate Charge (Qg): The STL8N10F7 is designed with a low gate charge, which translates to faster switching performance and reduced switching losses.
  • High Switching Frequency: Its characteristics allow for high-speed switching, making it suitable for high-frequency power conversion systems.

Applications

The STL8N10F7 is versatile and can be used in numerous applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control
  • Power Management Solutions
  • Automotive Applications
  • High-Performance Computing

Package and Environmental Compliance

The STL8N10F7 is offered in a TO-220 package, providing a balance between performance and size, suitable for PCB mounting. Additionally, it complies with various environmental standards, ensuring that it meets the requirements for eco-friendly design and manufacturing processes.

STMicroelectronics' commitment to innovation is evident in the STL8N10F7 Power MOSFET, making it an ideal choice for engineers and designers who require a high-efficiency, high-reliability component for their power management and conversion applications.

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