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STL8N65M5

Part No STL8N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A POWERFLAT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 1.4A (Ta), 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 690pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 70W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFLAT (5x5)
Dimension 14-PowerVQFN
Win Source Part Number 1103207-STL8N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL8N65M5 CAD Model

Description

The STL8N65M5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, renowned for its excellence in semiconductor technology. This device is a part of the MDmesh™ M5 series, which is known for its outstanding efficiency and performance in high-voltage power applications. The STL8N65M5 is designed with a focus on minimizing on-resistance and gate charge to ensure high efficiency in power conversion applications.

With a voltage rating of 650 V, the STL8N65M5 is well-suited for a variety of applications that require high voltage capabilities, such as switch-mode power supplies, LED lighting, welding equipment, and solar inverters. Its low on-resistance of just 0.65 Ω typ. ensures reduced conduction losses, making it an excellent choice for high-efficiency power designs.

The device can handle continuous currents up to 7 A, providing ample headroom for most medium-power applications. It is encapsulated in a compact PowerFLAT™ 5x6 package, which not only saves space on the PCB but also enhances thermal performance due to its exposed die pad design. This package is optimized for efficient heat dissipation, ensuring reliable operation even under high power conditions.

STL8N65M5 incorporates the latest advancements in MDmesh™ technology, which utilizes a proprietary vertical structure that optimizes the device's on-state resistance per area. This technology also contributes to reduced switching losses, making the MOSFET ideal for high-frequency applications.

Key features of the STL8N65M5 include:

  • 650 V drain-source breakdown voltage (V<sub>DS)
  • 0.65 Ω typical on-resistance (R<sub>DS(on))
  • 7 A continuous drain current (I<sub>D)
  • Low gate charge and capacitances for faster switching
  • 100% avalanche tested for guaranteed reliability
  • High dv/dt capability for robustness against harsh conditions

Overall, the STL8N65M5 from STMicroelectronics represents a fusion of high voltage capability, low on-resistance, and high current handling, all packed into a space-saving and thermally efficient package. It is an ideal choice for designers looking to enhance power efficiency and reliability in their next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1400 $64.2000
70+ $1.7560 $122.9200
105+ $1.7011 $178.6155
145+ $1.6463 $238.7135
185+ $1.5914 $294.4090
245+ $1.4268 $349.5660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,920 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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