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STP10NK60Z

Part No STP10NK60Z
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 600V 10A TO-220
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
No 561067
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series SuperMESH
Packaging Tube
FET Type MOSFET N-Channel Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Rds On (Max) @ Id Vgs 750 mOhm @ 4.5A 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) @ Vds 1370pF @ 25V
Power - Max 115W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Device Package TO-220AB
Catalog N-Channel Standard FETs
Win Source Part Number 038130-STP10NK60Z
Family Name STP10NK60Z
Introduction Date April 01, 2002
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP10NK60Z CAD Model

Description

STP10NK60Z - N-Channel MOSFET by STMicroelectronics

The STP10NK60Z is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This power MOSFET is designed to deliver efficient power conversion in a wide range of electronic applications, making it an ideal choice for designers who require a balance between fast switching, low on-resistance, and cost-effectiveness.

With a drain-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 10A, the STP10NK60Z can handle high voltage applications while providing a robust and reliable performance. The device's on-resistance (R<sub>DS(on)) is as low as 0.85Ω, which contributes to its high efficiency by minimizing conduction losses.

The STP10NK60Z incorporates STMicroelectronics' proprietary Zener-protected SuperMESH™ technology, which provides enhanced protection against electrostatic discharge (ESD). This feature ensures the reliability and longevity of the device in environments where ESD can be a concern. Additionally, the MOSFET is characterized by its extremely low gate charge (Q<sub>g), which results in reduced switching losses and enables faster switching speeds, thus improving the overall efficiency of the power management system.

The device is encapsulated in a TO-220 package, known for its excellent thermal performance and ease of mounting on a printed circuit board (PCB). This package is widely accepted in the industry and is suitable for through-hole mounting, which allows for better heat dissipation and mechanical stability.

Applications of the STP10NK60Z are diverse and include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, high-efficiency DC-DC converters, LED lighting, and other power management tasks that require a high breakdown voltage, fast switching, and low on-resistance.

In summary, the STP10NK60Z is a testament to STMicroelectronics' commitment to providing high-quality power MOSFETs that meet the requirements of modern electronic designs. Its combination of high voltage capability, low on-resistance, and fast switching makes it a versatile component suitable for a broad array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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