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STP110N10F7

Part No STP110N10F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 110A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 5500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103625-STP110N10F7
Family Name STP110N10F7
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP110N10F7 CAD Model

Description

The STP110N10F7 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a global semiconductor leader known for its advanced and innovative technology. This MOSFET is designed to deliver high performance in a wide range of applications, making it an ideal choice for power management tasks in modern electronic devices.

Key Features

  • Low On-Resistance: The STP110N10F7 boasts an extremely low on-resistance (RDS(on)) of 8.7 mΩ max, which enhances its efficiency in conducting electricity and reduces the energy lost as heat, thereby improving the overall performance of the device it is used in.
  • High Current Capacity: With a continuous drain current (ID) of 110 A, this MOSFET can handle high current applications, making it suitable for power-intensive tasks.
  • 100V Drain-Source Voltage: The device is capable of withstanding a maximum drain-source voltage (VDS) of 100V, offering a good margin for a variety of electrical applications.
  • Enhanced Power Density: The STP110N10F7 is designed for a high power density, which allows for a compact design without compromising on power delivery.
  • Low Gate Charge: A low gate charge (Qg) ensures fast switching performance, which is critical in applications where efficiency and speed are paramount.

Applications

The STP110N10F7 is versatile and can be used in a broad range of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

Advanced Technology

This MOSFET is built using ST's advanced MDmesh™ technology which combines the benefits of reduced on-resistance and minimized gate charge to achieve superior switching performance. This technology also contributes to the device's robustness and reliability, making it a preferred choice for designers looking to improve the efficiency of their power conversion systems.

Conclusion

With its impressive array of features, the STP110N10F7 from STMicroelectronics is a powerful component that offers reliability and efficiency for a wide array of power applications. Its advanced technology and high-performance characteristics make it an essential element for any power management or control system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9682 $53.2510
130+ $0.7944 $103.2720
195+ $0.7696 $150.0720
270+ $0.7448 $201.0960
350+ $0.7200 $252.0000
465+ $0.6455 $300.1575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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