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STP11NM60FDFP

Part No STP11NM60FDFP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 037738-STP11NM60FDFP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP11NM60FDFP CAD Model

Description

STP11NM60FDFP - N-channel MOSFET by STMicroelectronics

The STP11NM60FDFP is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is part of ST's MDmesh™ II series, which is known for its excellent on-state resistance (RDS(on)) and superior switching performance, making it an ideal choice for a wide range of power applications.

With a drain-source voltage (VDS) of 600V, the STP11NM60FDFP is designed to handle high voltage applications efficiently. Its maximum continuous drain current (ID) of 11A ensures that it can support high current loads. The device's low threshold voltage (VGS(th)) allows for easy drive capability, which is particularly beneficial in low voltage operations.

The MOSFET's low gate charge (Qg) and reduced input capacitance contribute to its fast switching characteristics, which is critical for applications requiring high-frequency operation. This feature also helps in reducing switching losses, thus improving the overall efficiency of the system it is integrated into. Additionally, the device's 100% avalanche tested design ensures robustness and reliability under extreme conditions.

The STP11NM60FDFP comes in a fully isolated TO-220FP package, which provides good thermal performance and simplifies the mounting process as no insulating spacers or backplane insulation is required. This package is also advantageous for heat dissipation, allowing the MOSFET to operate at lower temperatures and extending its lifespan.

Applications for the STP11NM60FDFP are diverse and include high-efficiency converters, power management solutions, switch-mode power supplies (SMPS), lighting applications, and high-performance power switches. Its robustness and efficiency make it suitable for both industrial and consumer electronics where power efficiency and reliability are paramount.

Overall, the STP11NM60FDFP N-channel MOSFET is a testament to STMicroelectronics' commitment to providing energy-saving and environmentally friendly solutions to the electronics market. It is a versatile component that meets the stringent requirements of modern power electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 20,024 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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