STP140N8F7 - Power MOSFET by STMicroelectronics
The STP140N8F7 is a high-performance, N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including but not limited to, power supplies, motor drives, and automotive systems.
Key Features
- Low On-Resistance: The STP140N8F7 boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 8.7 mΩ max, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
- High Current Capability: With a continuous drain current (I<sub>D) of up to 120 A, this MOSFET is capable of handling high current loads, making it ideal for demanding applications.
- High Voltage Threshold: The device can sustain a maximum drain-source voltage (V<sub>DSS) of 80 V, offering a good safety margin for applications that may experience voltage spikes or surges.
- Low Gate Charge: A low gate charge (Q<sub>g) ensures that the STP140N8F7 can switch on and off rapidly, thus improving the performance of power converters and reducing switching losses.
- 100% Avalanche Tested: Guaranteeing robustness and reliability, the MOSFET is thoroughly tested for avalanche energy (E<sub>AS) tolerance, ensuring it can withstand tough conditions.
Applications
The STP140N8F7 is versatile and can be utilized in a variety of power management tasks. It is particularly well-suited for:
- Switch Mode Power Supplies (SMPS)
- DC-DC Converters
- Motor Control Circuits
- Automotive Applications
- Power Management Functions
Environmental and Quality Certifications
STMicroelectronics is committed to environmental sustainability and quality. The STP140N8F7 meets various international standards, including:
- RoHS Compliance
- REACH Compliance
- ST's ECOPACK® Specifications
With its advanced technology and robust design, the STP140N8F7 Power MOSFET from STMicroelectronics is a reliable choice for designers and engineers looking to optimize power efficiency and performance in their electronic designs.