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STP180N55F3

Part No STP180N55F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 120A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 053916-STP180N55F3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP180N55F3 CAD Model

Description

STP180N55F3 - N-channel MOSFET by STMicroelectronics

The STP180N55F3 is a robust N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and performance for a wide range of applications. This MOSFET is part of the MDmesh™ III series, which utilizes an innovative proprietary vertical structure that is tailored to provide extremely low on-resistance and minimize gate charge, making it suitable for high-efficiency power supplies and other power-related applications.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures low conduction losses and enhances the overall efficiency of the application it is used in.
  • High Current Capability: With a continuous drain current of up to 180A, the STP180N55F3 can handle high current applications with ease, making it ideal for power-intensive tasks.
  • Low On-Resistance (R<sub>DS(on)): The device boasts an exceptionally low on-resistance of just 0.0095 Ω, which contributes to reduced power losses and improved performance.
  • 100% Avalanche Tested: This MOSFET is guaranteed to be reliable in even the toughest conditions, as it is 100% avalanche tested to ensure it can handle sudden energy spikes.
  • High dv/dt Capability: The STP180N55F3 has a high dv/dt capability, ensuring it can cope with fast switching environments and applications.

Applications

The versatile nature of the STP180N55F3 makes it suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Current DC/DC Converters
  • Motor Control Applications
  • LED Lighting Solutions
  • Automotive and Industrial Applications

Quality and Reliability

STMicroelectronics is known for its commitment to quality, and the STP180N55F3 is no exception. It is produced in state-of-the-art manufacturing facilities, ensuring that each component meets the highest quality standards. Engineers and designers can rely on this MOSFET to deliver consistent performance and longevity.

For detailed specifications, application notes, and additional resources, designers and engineers should refer to the official STMicroelectronics documentation and support files for the STP180N55F3.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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