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STP19NM50N

Part No STP19NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 14A TO220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP19
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849615-STP19NM50N
Ultra Librarian 3D Model Ultra Librarian STP19NM50N CAD Model

Description

The STP19NM50N is a robust and high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to target a wide range of applications that require high voltage and current handling capabilities, including switch-mode power supplies, motor control, and power converters.

Key Features:

  • Voltage Rating: With a drain-source voltage (V<sub>DS) of 500V, the STP19NM50N is well-suited for high voltage applications, providing a generous margin for safety and reliability.
  • Low On-Resistance: The on-resistance (R<sub>DS(on)) is as low as 0.22Ω, which minimizes conduction losses and improves overall efficiency.
  • Current Capacity: It can handle continuous drain current (I<sub>D) up to 17A, making it capable of driving substantial loads.
  • Package: The device is housed in a TO-220 package, known for its ease of installation and excellent thermal performance.
  • 100% Avalanche Tested: Ensuring robustness and reliability, each device is tested for avalanche energy capability.
  • Zener-Protected: The gate-source is protected with a built-in Zener diode, providing protection against overvoltage and enhancing the MOSFET's durability.

Applications:

The STP19NM50N's high efficiency and power handling make it suitable for a variety of applications, including:

  • High efficiency switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Electronic lamp ballasts
  • DC-AC converters for solar power systems
  • Motor control drivers
  • LED lighting solutions

Advantages:

With its robustness and high power efficiency, the STP19NM50N from STMicroelectronics offers multiple advantages for designers:

  • Reduces power losses and improves efficiency, which is critical for energy-saving applications.
  • Provides high reliability and long operational life due to its rugged design and avalanche capability.
  • Enables compact designs thanks to its TO-220 package, which is suitable for high power density applications.

The STP19NM50N is a testament to STMicroelectronics' commitment to providing high-quality and reliable components for advanced electronic applications.

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