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STP25N80K5

Part No STP25N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 19.5A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 19.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212357-STP25N80K5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP25N80K5 CAD Model

Description

Product Overview: STP25N80K5 - N-channel Power MOSFET

The STP25N80K5 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ K5 series, which utilizes innovative technology to achieve excellent on-state resistance and switching performance combined with a high avalanche ruggedness.

The STP25N80K5 is particularly suited for high-efficiency applications, thanks to its low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g). With a drain-source voltage (V<sub>DSS) of 800V, it is capable of handling high voltage applications while providing a continuous drain current (I<sub>D) of 25A, making it a reliable choice for power supply and conversion systems.

This MOSFET is built using STMicroelectronics' state-of-the-art MDmesh™ technology, which is renowned for decreasing power losses and enhancing power density. The device is encapsulated in a TO-220 package, known for its robustness and thermal performance, ensuring reliable operation even under challenging conditions.

Key Features:

  • High Voltage Capability: With a V<sub>DSS of 800V, it can accommodate high voltage applications.
  • Low On-Resistance: The low R<sub>DS(on) minimizes conduction losses, enhancing overall efficiency.
  • Reduced Gate Charge: The low Q<sub>g allows for faster switching and reduced switching losses.
  • Avalanche Ruggedness: Ensures the MOSFET can handle stress under avalanche conditions.
  • TO-220 Package: Robust package design ensures good thermal and mechanical performance.

Applications for the STP25N80K5 are diverse and include switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and other power-related electronics where efficiency and reliability are paramount.

With the combination of its high voltage capability, efficiency, and STMicroelectronics' commitment to quality, the STP25N80K5 Power MOSFET is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9478 $59.3736
29+ $4.0598 $117.7342
45+ $3.9329 $176.9805
61+ $3.8061 $232.1721
79+ $3.6791 $290.6489
106+ $3.2986 $349.6516
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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