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STP31N65M5

Part No STP31N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 816pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 148 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 053929-STP31N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP31N65M5 CAD Model

Description

STP31N65M5 - N-channel 650 V, 0.190 Ohm typ., 22 A MDmesh™ M5 Power MOSFET in a TO-220 package

The STP31N65M5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics as part of their innovative MDmesh™ M5 series. This device is designed to meet the efficiency and reliability demands of modern high-power switching applications, such as switch-mode power supplies, lighting, welding, and high-performance converters.

With a breakthrough voltage of 650 V, this MOSFET is well-suited for applications that require a robust and high voltage threshold to ensure safe operation under stressful conditions. Its low on-resistance of only 0.190 Ohm (typical) contributes to its high efficiency, by minimizing conduction losses and thereby reducing the thermal stress on the device during operation.

The STP31N65M5 can handle a continuous drain current of up to 22 A, making it capable of supporting high current loads. This feature, combined with the high voltage capability, makes it an ideal choice for power applications that demand high performance and reliability.

Encased in a TO-220 package, the STP31N65M5 ensures a good balance between thermal performance and compactness, allowing for efficient heat dissipation while maintaining a form factor that is easy to handle in various circuit designs. The TO-220 package is widely used and favored in the industry for its ease of mounting and good thermal and electrical characteristics.

STMicroelectronics' MDmesh™ technology is renowned for its ability to provide MOSFETs with low on-resistance and reduced gate charge, which results in lower switching and conduction losses. The STP31N65M5 benefits from this technology, offering excellent dynamic performance and high efficiency, which are critical for energy-sensitive applications.

In summary, the STP31N65M5 from STMicroelectronics is a robust, high voltage, and high efficiency Power MOSFET that is well-suited for a wide range of power applications. Its advanced technology and reliable performance make it a solid choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0806 $53.0478
30+ $3.3482 $100.4460
47+ $3.2435 $152.4445
64+ $3.1389 $200.8896
83+ $3.0343 $251.8469
111+ $2.7204 $301.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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